H. Abe, M. Ishibashi, K. Ohshima and T. Suzuki
Institute of Applied Physics, University of Tsukuba, Tsukuba 305, Japan
M. Wuttig
Department of Materials and Nuclear Engineering, University of Maryland,
College Park, MD 20742-2115, U. S. A.
K. Kakurai
Institute for Solid State Physics, University of Tokyo, Roppongi, Minatoku,
Tokyo 106, Japan
Phys. Rev. B 50, 9020 (1994).
The kinetics of the martensitic transition in In-Tl alloy
has been studied by X-ray and neutron-diffraction methods. A characteristic
waiting time appears at fixed temperature above Ms, the normal
martensitic phase transition start temperature. A similar waiting time
is also seen for inverse phase transitions. A peculiar temperature Tp,
which is above Ms, but below To, is found to exist.
The time development of X-ray diffraction patterns shows a very different
behavior whether the temperature is above Tp or below Tp.
It is found that ideal nucleation and growth take place between Tp
and To. Between Tp and Ms, the kinetics of the phase transition is more complicated. In order to
understand the kinetics of the phase transition, the temperature-dependent
waiting time curve in In-Tl alloy is calculated using Roitburd method (
Materials Sci. Eng. A127, 229 (1990) ) and is found to be in good agreement with experimental results.
 |
FIG.1
Time dependence of diffraction pattern above Tp at 256.7 K with
using (a) Si (311) and HOPG (002) as monochromator. ts corresponds
to phase transition start time. (220)fcc Bragg reflection for
the parent phase and (202)fct Bragg reflections from variant
I and variant II for the low-temperature phase are pointed out at the peaks. |
 |
FIG.2
Time dependence of diffraction pattern below Tp at 253 K with
using HOPG (002) as monochromator. |
 |
FIG.3(a)
Growth curves of low-temperature phase scaled by intensity. ts
corresponds to phase transition start time. |
 |
FIG.3(b)
Growth curves of low-temperature phase scaled by both intensity and t1/2,
t1/2 is time when scaled intensity becomes 1/2. |
 |
FIG.4
t1/2 incubation time vs temperature. Solid line shows calculated
incubation time. Tp is peculiar temperature derived from the
different growth process. T0 is defined by DeltaG(T0)=0;
DeltaG(T) is the difference of free energy between parent phase and low-temperature
phase. |
 |
FIG.5(a)
Calculated nucleation barrier by the Roitburd method: curve 1, single-domain
(single-crystal) martensite; curve 2, multiple-domain (twinned) martensite. |
 |
FIG.5(b)
Calculated nucleation probability derived from nucleation barrier: curve
1, single-domain (single-crystal) martensite; curve 2, multiple-domain
(twinned) martensite. |
References
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Date, Mater. Trans. JIM 34, 415 (1993).
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11. H. Abe, K. Ohshima, T. Suzuki, S. Hoshino and K. Kakurai, Phys. Rev.B 49, 3739 (1994).
12. N. Toyoshima, K. Harada, H. Abe, K. Ohshima, T. Suzuki, M. Wuttig and T. R. Finlayson, J. Phys. Soc. Jpn. 63, 1808 (1994).
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Department of Materials Science and Engineering
National Defense Academy
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